Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAM-Reference-Cited by-同舟云学术

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Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAM

Published:2018-11 Issue: Volume:53 Page:871-879
ISSN:2211-2855
Container-title:Nano Energy
language:en
Short-container-title:Nano Energy

Author:

Chang Chia-Fu,Chen Jui-Yuan,Huang Guan-Min,Lin Ting-Yi,Tai Kuo-Lun,Huang Chih-Yang,Yeh Ping-Hung,Wu Wen-Wei

Funder

Ministry of Science and Technology

Ministry of Education

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,General Materials Science,Renewable Energy, Sustainability and the Environment

Reference37 articles.

1. Nanoionics-based resistive switching memories

2. Overview of candidate device technologies for storage-class memory

3. Resistance random access memory

4. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

5. Memristive devices for computing

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1. HfO2-based resistive random access memory with an ultrahigh switching ratio;Journal of Applied Physics;2024-08-15

2. The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode;Electronic Materials;2024-06-06

3. Enhanced resistive switching performance and structural evolution of NiO/Nb2O5−x bilayer memristive device;Journal of Alloys and Compounds;2024-05

4. Magnetite–Polyaniline Nanocomposite for Non-Volatile Memory and Neuromorphic Computing Applications;Electronic Materials Letters;2024-04-16

5. Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems;The Journal of Chemical Physics;2024-04-08

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