An X-ray photoelectron study of the dependence of HF concentration on an etched silicon surface-Reference-Cited by-同舟云学术

An X-ray photoelectron study of the dependence of HF concentration on an etched silicon surface

Published:1992-06 Issue:4 Volume:58 Page:261-270
ISSN:0368-2048
Container-title:Journal of Electron Spectroscopy and Related Phenomena
language:en
Short-container-title:Journal of Electron Spectroscopy and Related Phenomena

Author:

Benny E.T.Paul,Majhi J.

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Radiation,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. A vapour etching technique for the photolithography of silicon dioxide

2. Selective etching of native oxide by dry processing using ultra clean anhydrous hydrogen fluoride

3. The Influence of Silicon Surface Cleaning Procedures on Silicon Oxidation

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