Comparison of the information content in 〈110〉 - and 〈100〉 -projected high-resolution transmission electron microscope images for the quantitative analysis of AlAs/GaAs interfaces
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Transmission electron microscopy of interfaces in III–V compound semiconductors
2. Transmission electron microscope observation of lattice image of AlxGa1−xAs‐AlyGa1−yAs superlattices with high contrast
3. Proc. 38th Annual EMSA Meeting;Olson,1980
4. Actual comparison of experimental and simulated lattice images of the GaAs/AlAs interface
5. Interface structure of a GaAs-AlAs superlattice MBE grown on a GaAs vicinal surface
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