Interface structure of a GaAs-AlAs superlattice MBE grown on a GaAs vicinal surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Transmission electron microscopy of interfaces in III–V compound semiconductors
2. Structural features of MBE grown very short period GaAs-AlAs superlattices
3. Actual comparison of experimental and simulated lattice images of the GaAs/AlAs interface
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1. 〈110〉 HREM of interfacial structures in semiconductor hetero-structures;Microscopy Research and Technique;1998-02-01
2. High-resolution transmission electron microscopy of heterostructures;Solid-State Electronics;1994-04
3. Comparison of the information content in 〈110〉 - and 〈100〉 -projected high-resolution transmission electron microscope images for the quantitative analysis of AlAs/GaAs interfaces;Ultramicroscopy;1994-01
4. High-Resolution Transmission Electron Microscopy of AlAs/GaAs Interfacial Structure in the <110> Projection;Japanese Journal of Applied Physics;1993-06-15
5. High‐resolution transmission electron microscopy of vicinal AlAs/GaAs interfacial structure;Applied Physics Letters;1993-04-05
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