The determination of the structure and composition at interfaces to atomic resolution-Reference-Cited by-同舟云学术

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The determination of the structure and composition at interfaces to atomic resolution

Published:1989-05 Issue:1-4 Volume:29 Page:18-30
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Boothroyd C.B.,Baxter C.S.,Bithell E.G.,Hÿtch M.J.,Ross F.M.,Sato K.,Stobbs W.M.

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Investigations of dislocation strain fields using weak beams

2. Composition Dependence of Equal Thickness Fringes in an Electron Microscope Image of GaAs/AlxGa1-xAs Multilayer Structure

3. Simulation Studies of a Composition Analysis by Thickness-Fringe (CAT) in an Electron Microscope Image of GaAs/AlxGa1-xAs Superstructure

4. Compositional Studies of Semiconductor Alloys by Bright Field Electron Microscope Imaging of Wedged Crystals

5. Microscopy of Semiconducting Materials, 1987;Boothroyd,1987

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural characterization of TiN/NbN multilayers: X-ray diffraction, energy-filtered TEM and Fresnel contrast techniques compared;Journal of Microscopy;2005-03

2. HRTEM study of a Cu/Al2O3interface;Philosophical Magazine A;1991-02

3. Fresnel fringe effects at interfaces of thin multilayer structures;Proceedings, annual meeting, Electron Microscopy Society of America;1990-08

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