Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films-Reference-Cited by-同舟云学术

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Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films

Published:1990-12 Issue: Volume:193-194 Page:595-609
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Nguyen S.V,Dobuzinsky D,Dopp D,Gleason R,Gibson M,Fridmann S

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition

2. Electrical characteristics of very thin SiO2deposited at low substrate temperatures

3. Deposition of device quality silicon dioxide thin films by remote plasma enhanced chemical vapor deposition

4. The Composition and Properties of PECVD Silicon Oxide Films

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