Pd/Ge ohmic contacts for GaAs metal-semiconductor field effect transistors: Technology and performance-Reference-Cited by-同舟云学术

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Pd/Ge ohmic contacts for GaAs metal-semiconductor field effect transistors: Technology and performance

Published:1990-05 Issue:1 Volume:187 Page:9-18
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Paccagnella A.,Wang L.C.,Canali C.,Castellaneta G.,Dapor M.,Donzelli G.,Zanoni E.,Lau S.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Uniform and thermally stable AuGeNi ohmic contacts to GaAs

2. Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact ton‐type GaAs

3. Thermally stable ohmic contacts ton‐type GaAs. I. MoGeW contact metal

4. High-resolution transmission electron microscope studies of an Al–Ge–Ni Ohmic contact to GaAs

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of ohmic contact based on platinum to p-type compositionally graded AlGaAs layers;Journal of Physics: Conference Series;2009-01-01

2. Performances of novel Pd/Sn and Pd/Sn/Au ohmic metallizations to n-GaAs;Microelectronic Engineering;2002-04

3. Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the fabrication of GaAs MESFETs;IEEE Transactions on Electron Devices;2001-04

4. PdGe-Based Ohmic Contact on n-GaAs with Highly and Poorly Doped Layers;Japanese Journal of Applied Physics;2000-05-15

5. Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic Contacts for GaAs MESFETs: Technology and Performance;Solid-State Electronics;2000-04

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