Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic Contacts for GaAs MESFETs: Technology and Performance-Reference-Cited by-同舟云学术

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Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic Contacts for GaAs MESFETs: Technology and Performance

Published:2000-04 Issue:4 Volume:44 Page:655-661
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Islam M.S.,McNally Patrick J.,Zahirul Alam A.H.M.,Huda M.Q.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Metal-semiconductor contacts for GaAs bulk effect devices

2. Sharnam BL. Semiconductors and semimetals. Willardson RK, Beer AC, editors. vol. 15. New York: Academic Press, 1981. Chap. 1, p. 1

3. Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact ton‐type GaAs

4. Microstructure studies of AuNiGe Ohmic contacts to n-type GaAs

5. Alloyed ohmic contacts to GaAs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanisms of current flow in metal-semiconductor ohmic contacts;Semiconductors;2007-11

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