Slow positron annihilation spectroscopy of heterojunctions and homojunctions of GaAs-based semiconductor thin films-Reference-Cited by-同舟云学术

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Slow positron annihilation spectroscopy of heterojunctions and homojunctions of GaAs-based semiconductor thin films

Published:1988-12 Issue: Volume:166 Page:349-357
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Frost R.L.,Dewald A.B.,Schaffer J.P.,Rohatgi A.,Nielsen B.,Lynn K.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Positron annihilation spectroscopy of AlGaAs/GaAs interfaces in metalorganic chemical vapor deposition grown GaAs heterojunction solar cells

2. SiO2/Si interface probed with a variable‐energy positron beam

3. P.J. Schultz, K.G. Lynn, E. Tandberg, N. Nielsen, T.E. Jackman, L.C. Feldman, J. Bean and M. W. Denhoff, Phys. Rev. Lett., in the press.

4. Irradiation Induced Defects in III–V Semiconductor Compounds

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1. Magnetron Sputtered SnOxFilms on Tin Probed by Slow Positron Implantation Spectroscopy;Acta Physica Polonica A;1999-04

2. Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam;Japanese Journal of Applied Physics;1995-10-15

3. Silicide-Formation-Induced Defects in Si Substrates in Ti/Si and Ni/Si Systems by a Monoenergetic Positron Beam;Japanese Journal of Applied Physics;1994-01-15

4. Interface studies using variable energy positron beams;International Materials Reviews;1991-01

5. Slow positron annihilation spectroscopy and electron microscopy of electron beam evaporated cobalt and nickel silicides;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1990-07

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