Positron annihilation spectroscopy of AlGaAs/GaAs interfaces in metalorganic chemical vapor deposition grown GaAs heterojunction solar cells-Reference-Cited by-同舟云学术

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Positron annihilation spectroscopy of AlGaAs/GaAs interfaces in metalorganic chemical vapor deposition grown GaAs heterojunction solar cells

Published:1988-07 Issue:4 Volume:6 Page:2248-2252
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

DeWald A. B.,Frost R. L.,Ringel S. A.,Schaffer J. P.,Rohatgi A.,Nielsen B.,Lynn K. G.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.575019

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monoenergetic positron beam study of Si‐doped GaAs epilayers grown by low‐pressure metalorganic chemical vapor deposition using tertiarybutylarsine;Journal of Applied Physics;1993-04-15

2. Impurity effect on the creation of Ga vacancies in a Si‐doped layer grown on Be‐doped GaAs by molecular‐beam epitaxy;Journal of Applied Physics;1990-12

3. Vacancy‐type defects in Si+‐implanted GaAs and its effects on electrical activation by rapid thermal annealing;Journal of Applied Physics;1990-05-15

4. Positron annihilation spectroscopy: Applications to Si, ZnO, and multilayer semiconductor structures;Journal of Electronic Materials;1989-11

5. Slow positron annihilation spectroscopy of heterojunctions and homojunctions of GaAs-based semiconductor thin films;Thin Solid Films;1988-12

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