Effect of the AsCl3 mole fraction on the electrical parameters of vapour grown heteroepitaxial indium arsenide layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Reading Symp. on GaAs;Shaw,1966
2. Effects of the AsCl[sub 3] Mole Fraction on the Incorporation of Germanium, Silicon, Selenium, and Sulfur into Vapor Grown Epitaxial Layers of GaAs
3. Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layers
4. Variation of the carrier concentration of epitaxial GaAs without addition of dopants
5. Vapor Growth of InAs
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Microhardness profile in heteroepitaxial InAs/GaAs structures;Thin Solid Films;1993-03
2. Dislocation density in heteroepitaxial indium arsenide layers;Crystal Research and Technology;1990-06
3. Efficiencies of InAs transport and epitaxial growth by chemical vapour deposition in the system InAs-AsCl3-H2;Thin Solid Films;1988-07
4. Physicochemical analysis of InAs gas phase epitaxy in the InAs-AsCl3-H2 system II: InAs transport and epitaxial growth kinetics;Thin Solid Films;1987-02
5. Application of the iodide synthesis to the preparation of indium arsenide bulk crystals and epitaxial layers;Crystal Research and Technology;1983
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