Vapor Growth of InAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/14/i=2/a=184/pdf
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InAs nanowire growth on oxide-masked 〈111〉 silicon;Journal of Crystal Growth;2012-04
2. Advances in the synthesis of InAs and GaAs nanowires for electronic applications;Nano Today;2009-08
3. Indium arsenide: a semiconductor for high speed and electro-optical devices;Materials Science and Engineering: B;1993-04
4. Process characterization and evaluation of hydride VPE grown Ga x In1−x As using a Ga/In alloy source;Journal of Electronic Materials;1992-04
5. Correlation between electronegativity and dopant activity in ion‐implanted semi‐insulating GaAs;Applied Physics Letters;1990-07-23
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