Application of the iodide synthesis to the preparation of indium arsenide bulk crystals and epitaxial layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference10 articles.
1. Etching of Dislocations on the Low‐Index Faces of GaAs
2. Effect of the AsCl3 mole fraction on the electrical parameters of vapour grown heteroepitaxial indium arsenide layers
3. : Tverdost'-spravotchnik, Kiev 1968, p. 110
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