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Photoreflectance characterization of InAlGaAs molecular beam epitaxy layers and quantum wells

  • Published:1991-03 Issue:1-2 Volume:197 Page:1-8
  • ISSN:0040-6090
  • Container-title:Thin Solid Films
  • language:en
  • Short-container-title:Thin Solid Films

Author:

Cacciatore Carmelo,Campi Domenico,Coriasso Claudio,Rigo Cesare,Alibert Claude

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bandgap energy prediction of senary zincblende III–V semiconductor compounds using machine learning;Materials Science in Semiconductor Processing;2023-07

2. First-order Raman spectra from In1-x-yGaxAlyAs epitaxial layers grown on InP substrates;The European Physical Journal B;2001-11

3. Inx(AlzGa1-z)1-xAs as buffers for the growth of strain-relaxed InxGa1-xAs epilayers;Semiconductor Science and Technology;1993-03-01

4. Electron effective mass and band‐gap dependence on alloy composition of AlyGaxIn1−y−xAs, lattice matched to InP;Applied Physics Letters;1992-05-11

5. In(1-x-y)Al(x)Ga(y)As, physical properties;Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties
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