Summary Abstract: Molecular-beam epitaxial growth of high-quality In0.52Al0.48As and In1−x−yGaxAlyAs
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Published:1988-03
Issue:2
Volume:6
Page:665
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
12 articles.
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