The incorporation of oxygen during the reactive deposition of NiCrO resistive films-Reference-Cited by-同舟云学术

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The incorporation of oxygen during the reactive deposition of NiCrO resistive films

Published:1989-12 Issue:1-2 Volume:182 Page:237-246
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hintner D.,Mattheis R.,Vogler G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Electrical and structural properties of NiCr thin film resistors reactively sputtered in O2

2. Reactive Sputtering of NiCr Resistors With Closely Adjustable Temperature Coefficient of Resistance

3. Segregation phenomena in thin NiCr layers

4. Wiss. Ber. PTI;Vogler,1986

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2. Thin-film resistor fabrication for InP technology applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

3. Stress, resistance, and phase transitions in NiCr(60 wt %) thin films;Journal of Applied Physics;2000-03

4. Phase formation in coevaporated NiCr thin films;Thin Solid Films;1994-02

5. To the Kinetics of Nitrogen Incorporation during dc Magnetron Deposition;Contributions to Plasma Physics;1994

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