Selective tungsten CVD on submicron contact hole-Reference-Cited by-同舟云学术

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Selective tungsten CVD on submicron contact hole

Published:1995-12 Issue:1-2 Volume:270 Page:462-466
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Yeh Wen-Kuan,Chen Mao-Chieh,Wang Pei-Jan,Liu Lu-Min,Lin Mou-Shiung

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. The Kinetics of LPCVD Tungsten Deposition in a Single Wafer Reactor

2. Tungsten Workshop III;Foster,1988

3. Tungsten Workshop III;Kusumoto,1987

4. Interfacial Structure of Tungsten Layers Formed by Selective Low Pressure Chemical Vapor Deposition

5. Selective LPCVD Tungsten for Contact Barrier Applications

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Imaging of Atomic Layer Deposited (ALD) Tungsten Monolayers on α-TiO2(110) by X-ray Standing Wave Fourier Inversion;The Journal of Physical Chemistry B;2006-06-01

2. Charged clusters in thin film growth;International Materials Reviews;2004-06

3. Thin-Film Deposition Materials;Handbook of Chemicals and Gases for the Semiconductor Industry;2002-07-15

4. Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions;Applied Surface Science;2000-08

5. Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction;Thin Solid Films;2000-02

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