Atomic level epitaxy of 3C-SiC by low pressure vapour deposition with alternating gas supply
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Amorphous and Crystalline Silicon Carbide,1989
2. Amorphous and Crystalline Silicon Carbide II,1989
3. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
4. Heteroepitaxial β ‐ SiC on Si
5. Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure
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