Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. IVA-8 heteroepitaxial growth of cubic silicon carbide on foreign substrates
2. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
3. Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on Si
4. Schottky‐barrier field‐effect transistors of 3C‐SiC
5. The Growth of Single Crystal of 3C-SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating
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