Narrow band gap base heterojunction bipolar transistors using SiGe alloys-Reference-Cited by-同舟云学术

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Narrow band gap base heterojunction bipolar transistors using SiGe alloys

Published:1990-01 Issue:1-2 Volume:184 Page:153-162
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Iyer S.S.,Patton G.L.,Harame D.L.,Stork J.M.C.,Crabbé E.F.,Meyerson B.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference62 articles.

1. GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxy;Bean;J. Vac. Sci. Technol. A,1984

2. Intrinsic optical absorption in germanium-silicon alloys;Braunstein;Phys. Rev.,1958

3. Indirect band gap of coherently strained Si1−xGex bulk alloys on 〈001〉 silicon substrates;People;Phys. Rev. B,1985

4. Band alignments of coherently strained GexSi1−x heterostructures on 〈001〉 substrates;People;Appl. Phys. Lett.,1986

5. Measurement of the bandgap of GexSi1−x/Si strained-layer heterostructures;Lang;Appl. Phys. Lett.,1985

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photovoltaic Performance of Si and SiGe Surfaces Sonochemically Activated in Dichloromethane;Current Materials Science;2023-03

2. Reactions of disilane with the deuterium-terminated Ge(100) 2×1 surface;Surface Science;2008-06

3. Surface reactions of monoethylgermane on Si(100)-(2×1);Surface Science;1998-03

4. Surface Reactions During the Deposition of Ge from Chemical Sources on Ge(100)-(2×1);MRS Proceedings;1996

5. Electrical and structural characterization of boron-doped Si1−xGex strained layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-01

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