U-shaped distribution of interface states in metal-(Langmuir-Blodgett) Si structures with phthalocyanine Langmuir-Blodgett films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. An optical sensor for nitrogen dioxide based on a copper phthalocyanine Langmuir—Blodgett film
2. Improved feedback charge method for quasistatic CV measurements in semiconductors
3. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
4. A simple charge-based DLTS technique
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Monolayer and Spectroscopic Studies of an Amphiphilic (Phenylethynyl)anthracene Probe in Pure and Mixed Films with Charged and Neutral Lipids;Langmuir;1999-09-04
2. Characterization of conducting molecular films on silicon: Auger electron spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy and surface photovoltage;Applied Surface Science;1999-04
3. Photovoltage properties of semiconductor LB films on n-Si substrate in contact with metal electrode;Thin Solid Films;1997-12
4. Langmuir−Blodgett Film Organization Resulting from Asymmetrical or Partial Types of Monolayer Transfer: Comparison for Amphiphiles of Different Geometrical Shapes;Langmuir;1996-01-01
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