Interlayer diffusion phenomena in Ti-Au metallizations on n-type GaAs at 250°

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Interlayer diffusion phenomena in Ti-Au metallizations on n-type GaAs at 250°–450°C

Published:1975-02 Issue:2 Volume:25 Page:S31-S37
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Speight J.D.,Cooper K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. 7th Inst. Phys. Thin Film Conf.;Speight,1973

2. Proc. Symp. on GaAs;Murphy,1972

3. Composite avalanche diode structures for increased power capability

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3. Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al/sub 0.3/Ga/sub 0.7/As gate ins;IEEE Transactions on Reliability;2000-06

4. Thermal stability of a Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallization;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

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