Ion probe technique for the study of gallium diffusion in silicon nitride films

Author:

Lodding A.,Lundkvist L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Self-diffusion in silver at low temperatures

2. A UNIVERSAL MICROSECTIONING TECHNIQUE FOR DIFFUSION

3. Proc. 7th Int. Congr. on X-ray Optics and Microanalysis;Seran,1974

4. Proc. 5th Int. Congr. on X-Ray Optics and Microanalysis;Rouberol,1968

5. Silicon nitride, a new diffusion mask

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2. Distribution of species and Ga–N bonds in silicon co-implanted with gallium and nitrogen ions;AIP Conference Proceedings;2016

3. High-fluence Ga-implanted silicon—The effect of annealing and cover layers;Journal of Applied Physics;2014-07-14

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