Studies of some properties of mechanical stress in a-Si:H, a-SiNx:H and a-Si:H/a-SiNx:H heterojunction films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Growth morphology and defects in plasma-deposited a-Si:H films
2. Effect of silane dilution on intrinsic stress in glow discharge hydrogenated amorphous silicon films
3. Internal Stress and Thermal Expansion Coefficient of GDa-Si Films
4. Hydrogen-related mechanical stress in amorphous silicon and plasma-deposited silicon nitride
5. Residual strains in amorphous silicon films measured by x‐ray double crystal topography
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1. Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds;Physical Review B;2007-07-23
2. Intrinsic stress in chemical vapor deposited diamond films: An analytical model for the plastic deformation of the Si substrate;Journal of Applied Physics;2001-08
3. Internal stress and strain in heavily boron‐doped diamond films grown by microwave plasma and hot filament chemical vapor deposition;Journal of Applied Physics;1996-08
4. Effect of UV irradiation of the film during plasma chemical vapour deposition;Thin Solid Films;1992-09
5. Internal stress analysis in diamond films formed by d.c. plasma chemical vapour deposition;Thin Solid Films;1992-08
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