Rapid thermal anneal of arsenic implanted into Si(100) and Si(111)-Reference-Cited by-同舟云学术

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Rapid thermal anneal of arsenic implanted into Si(100) and Si(111)

Published:1987-05 Issue:2 Volume:149 Page:189-195
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Feygenson A.,Zemel J.N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Ion Implantation and Beam Processing;Beanland,1984

2. Silicon Integrated Circuits;Celler,1985

3. Surface Modification and Alloying;Williams,1983

4. Laser and Electron Beam Processing of Semiconductor Structures;Spaepen,1982

5. Regrowth of amorphous films

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rapid thermal annealing of arsenic-implanted silicon: A review;Thin Solid Films;1988-11

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