Effects of the AsCl3 mole fraction and the substrate orientation on the electrical parameters of heteroepitaxial indium arsenide layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference4 articles.
1. Effect of the AsCl3 mole fraction on the electrical parameters of vapour grown heteroepitaxial indium arsenide layers
2. Electron Transport in InSb, InAs, and InP
3. Charge carrier transport in gate-voltage-controlled heteroepitaxial indium arsenide layers
4. Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Efficiencies of InAs transport and epitaxial growth by chemical vapour deposition in the system InAs-AsCl3-H2;Thin Solid Films;1988-07
2. Physicochemical analysis of InAs gas phase epitaxy in the InAs-AsCl3-H2 system II: InAs transport and epitaxial growth kinetics;Thin Solid Films;1987-02
3. Application of the iodide synthesis to the preparation of indium arsenide bulk crystals and epitaxial layers;Crystal Research and Technology;1983
4. Anisotropy during vapor-phase epitaxy of indium arsenide;Soviet Physics Journal;1982-04
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