Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers-Reference-Cited by-同舟云学术

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Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers

Published:1990-01 Issue:1-2 Volume:184 Page:37-45
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Djebbar N.,Gutierrez J.,Charki H.,Vapaille A.,Prudon G.,Dupuy J.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Silicon MBE: Recent developments

2. Potential enhanced Sb and As doping in Si molecular beam epitaxy

3. Doping by Secondary Implantation

4. n‐Type Doping Techniques in Silicon Molecular Beam Epitaxy by Simultaneous Arsenic Ion Implantation and by Antimony Evaporation

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of delta-doped silicon layers by molecular beam epitaxy with simultaneous lowenergy ion bombardment of the growth surface;Technical Physics Letters;1997-04

2. Arsenic doping in Si-MBE using low energy ion implantation (LEII);Selected Topics in Group IV and II–VI Semiconductors;1996

3. Arsenic doping in Si-MBE using low energy ion implantation (LEII);Journal of Crystal Growth;1995-12

4. Low Energy Ion Implantation of as During Si-MBE;MRS Proceedings;1995

5. Depth resolution in SIMS study of boron δ-doping in epitaxial silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03

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