A material removal model for silicon oxide layers in chemical mechanical planarization considering the promoted chemical reaction by the down pressure-Reference-Cited by-同舟云学术

A material removal model for silicon oxide layers in chemical mechanical planarization considering the promoted chemical reaction by the down pressure

Published:2016-01 Issue: Volume:93 Page:11-16
ISSN:0301-679X
Container-title:Tribology International
language:en
Short-container-title:Tribology International

Author:

Wang Yongguang,Chen Yao,Qi Fei,Zhao Dong,Liu Weiwei

Funder

National Natural Science Foundation of China

Scientific Research Foundation of Soochow University

State Key Laboratory of Tribology of Tsinghua University

Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanical Engineering,Mechanics of Materials

Reference37 articles.

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3. A mathematical model for material removal and chemical–mechanical synergy in chemical–mechanical polishing at molecular scale;Bai;Appl Surf Sci,2007

4. Chemically enhanced synergistic wear: a copper chemical mechanical polishing case study;Nolan;Wear,2013

5. Semi-empirical material removal rate distribution model for SiO2 chemical mechanical polishing (CMP) processes;Lee;J Int Soc Precis Eng,2013

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