Modelling of an industrial moving belt chemical vapour deposition reactor forming <mml:math altimg="si53.gif" display="inline" overflow="scroll" xmlns:xocs="http://www.elsevier.com/xml/xocs/dtd" xmlns:xs="http://www.w3.org/2001/XMLSchema" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://www.elsevier.com/xml/ja/dtd" xmlns:ja="http://www.elsevier.com/xml/ja/dtd" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:tb="http://www.elsevier.com/xml/common/table/dtd" xmlns:sb="http://www.elsevier.com/xml/common/struct-bib/dtd" xmlns:ce="http://www.elsevier.com/xml/common/dtd" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:cals="http://www.elsevier.com/xml/common/cals/dtd"><mml:msub><mml:mrow><mml:mi>SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math> films-Reference-Cited by-同舟云学术

Modelling of an industrial moving belt chemical vapour deposition reactor forming SiO2 films

Published:2005-09 Issue:19 Volume:60 Page:5331-5340
ISSN:0009-2509
Container-title:Chemical Engineering Science
language:en
Short-container-title:Chemical Engineering Science

Author:

Nieto J.P.,Jeannerot L.,Caussat B.

Publisher

Elsevier BV

Subject

Applied Mathematics,Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry

Reference16 articles.

1. Film formation by a new chemical vapour deposition process using ionization of tetraethylorthosilicate;Adachi;Japan Journal of Applied Physics,1997

2. Chemical kinetics in chemical vapour deposition;Coltrin;Thin Solid Films,2000

3. Mechanisms of deposition of SiO2 from TEOS and related organosilicon compounds and ozone;Dobkin;Journal of Electrochemical Society,1995

4. Silicon dioxide deposition by atmospheric pressure and low temperature CVD using TEOS and ozone;Fujino;Journal of Electrochemical Society,1990

5. Molecular Theory of Gases and Liquids;Hirschfelder,1954

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