Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference20 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
3. Bowing parameter of the band-gap energy of GaNxAs1−x
4. Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)
5. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
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