Observation and LEED I–V analysis of the Ge(111)-1×1-Sb system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference12 articles.
1. Initial growth of Bi films on a Si(111) substrate: Two phases of √3 × √3 low-energy-electron-diffraction pattern and their geometric structures
2. Observation and low-energy-electron-diffraction structure analysis of the Ge(111)-(√3 × √3 )R30°-Bi system
3. Low Energy Electron Diffraction and X-Ray Photoelectron Spectroscopy Studies of the Formation of Submonolayer Interfaces of Sb/Si(111)
4. Photoelectron and inverse photoelectron spectroscopy studies of the surface
5. Evidence for trimer reconstruction of Si(111) √3 × √3 -Sb: Scanning tunneling microscopy and first-principles theory
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1. Self-limiting Sb monolayer as a diffusion source for Ge doping;Applied Surface Science;2019-12
2. Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness;Journal of Applied Physics;2018-04-28
3. Suppression of twin generation in the growth of GaAs on Ge (111) substrates;Journal of Crystal Growth;2017-11
4. 5.8.11 Gd, Ge;Physics of Solid Surfaces;2015
5. High-resolution core-level photoemission study of Ge(111)2×1–Sb and Ge(111)(√3×√3)R30°–Bi reconstructions;Journal of Electron Spectroscopy and Related Phenomena;2007-06
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