Observation and low-energy-electron-diffraction structure analysis of the Ge(111)-(√3 × √3 )R30°-Bi system
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.6500/fulltext
Reference20 articles.
1. The structure and properties of metal-semiconductor interfaces
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4. Quantitative Structural Determination of Metallic Film Growth on a Semiconductor Crystal:(3×3)R30°→(1×1)Pb on Ge(111)
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