Schottky barriers on clean-cleaved silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference21 articles.
1. Metal-Induced Surface States during Schottky-Barrier Formation on Si, Ge, and GaAs
2. Surface spectroscopy of Schottky-barrier formation on Si(111) 7 × 7: Photoemission studies of filled surface states and band bending
3. Electron energy loss spectroscopy of the Si(111)—simple-metal interface
4. Surface States and Rectification at a Metal Semi-Conductor Contact
5. Relation of Schottky Barriers to Empty Surface States on III-V Semiconductors
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1. Inhomogeneous ohmic contacts: Barrier height and contact area determination;Applied Physics Letters;2012-07-30
2. Contactless capacitance–voltage and photoluminescence characterization of ultrathin oxide–silicon interfaces formed on hydrogen terminated (111) surfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07
3. Inhomogeneous Schottky barriers at Ag/Si(111) and Ag/Si(100) interfaces;Journal of Applied Physics;1996-05-15
4. Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm;Semiconductor Science and Technology;1996-03-01
5. Schottky Contacts on Silicon;Springer Series in Electronics and Photonics;1994
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