Contactless capacitance–voltage and photoluminescence characterization of ultrathin oxide–silicon interfaces formed on hydrogen terminated (111) surfaces-Reference-Cited by-同舟云学术

Contactless capacitance–voltage and photoluminescence characterization of ultrathin oxide–silicon interfaces formed on hydrogen terminated (111) surfaces

Published:1996-07 Issue:4 Volume:14 Page:2872
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hashizume Tamotsu

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlling the Charge of a Specific Surface Atom by the Addition of a Non-Site-Specific Single Impurity in a Si Nanocrystal;Nano Letters;2005-11-25

2. Ultrahigh-Vacuum Contactless Capacitance–Voltage Characterization of Hydrogen-Terminated-Free Silicon Surfaces;Japanese Journal of Applied Physics;2000-07-30

3. A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements;Japanese Journal of Applied Physics;1999-04-30

4. Formation of ultrathin oxynitride layers on Si(100) by low-temperature electron cyclotron resonance N[sub 2]O plasma oxynitridation process;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07

5. Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods;Japanese Journal of Applied Physics;1997-03-30