A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements-Reference-Cited by-同舟云学术

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A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements

Published:1999-04-30 Issue:Part 1, No. 4B Volume:38 Page:2349-2354
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoshida Toshiyuki,Hasegawa Hideki,Sakai Takamasa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of natural and anneal-induced oxides on atomic-layer-deposition Al2O3/In0.53Ga0.47As interfaces;Japanese Journal of Applied Physics;2014-12-03

2. Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method;Applied Physics Letters;2012-09-17

3. Modification of Surface State Density Distribution of p-InP Surfaces by Nitrogen Radical Exposure;Japanese Journal of Applied Physics;2011-07-05

4. Modification of Surface State Density Distribution of p-InP Surfaces by Nitrogen Radical Exposure;Japanese Journal of Applied Physics;2011-07-01

5. Air-Gap Capacitance–Voltage Analyses of p-InP Surfaces Covered with Natural Oxide;Applied Physics Express;2010-10-22

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