Air-Gap Capacitance–Voltage Analyses of p-InP Surfaces Covered with Natural Oxide-Reference-Cited by-同舟云学术

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Air-Gap Capacitance–Voltage Analyses of p-InP Surfaces Covered with Natural Oxide

Published:2010-10-22 Issue:11 Volume:3 Page:116601
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Yoshida Toshiyuki,Hashizume Tamotsu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=11/a=116601/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method;Applied Physics Letters;2012-09-17

2. Modification of Surface State Density Distribution of p-InP Surfaces by Nitrogen Radical Exposure;Japanese Journal of Applied Physics;2011-07-05

3. Modification of Surface State Density Distribution of p-InP Surfaces by Nitrogen Radical Exposure;Japanese Journal of Applied Physics;2011-07-01

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