Inhomogeneous Schottky barriers at Ag/Si(111) and Ag/Si(100) interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362390
Reference56 articles.
1. Schottky barrier formation on iii-v semiconductor surfaces: A critical evaluation
2. The structure and properties of metal-semiconductor interfaces
3. Surface States and Rectification at a Metal Semi-Conductor Contact
4. Schottky Barrier Heights and the Continuum of Gap States
5. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
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