Experimental evidence of the Coulomb gap in a high-mobility 2D electron system in silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference12 articles.
1. Conduction in glasses containing transition metal ions
2. Coulomb gap and low temperature conductivity of disordered systems
3. Conductivity-peak broadening in the quantum Hall regime
4. Studies of the fractional quantum Hall effect in a silicon MOSFET
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