Affiliation:
1. Research Group ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir, Morocco
Abstract
In this paper, we investigate the temperature dependence of the electrical resistivity of a two-dimensional electron system in n-channel Si -MOSFETs at zero magnetic field down to 0.2 K. At low electron densities, near the metal–insulator transition point from the insulating side, our results show the existence of a crossover, from Efros–Shklovskii variable range hopping (ES-VRH), which is consistent with the existence of a Coulomb gap, where ρ = ρ0 exp (T ES /T)1/2 to Mott regime, where ρ = ρ0 exp (T M /T)1/3. With ρ0 is a pre-exponential factor that is found to be close to 2 (h/e2), this crossover occurs when T ~ 1 K .
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Cited by
8 articles.
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