Studies of the fractional quantum Hall effect in a silicon MOSFET-Reference-Cited by-同舟云学术

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Studies of the fractional quantum Hall effect in a silicon MOSFET

Published:1986-04 Issue:1-2 Volume:170 Page:154-159
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Furneaux J.E.,Syphers D.A.,Brooks J.S.,Schmiedeshoff G.M.,Wheeler R.G.,Stiles P.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference10 articles.

1. Two-Dimensional Magnetotransport in the Extreme Quantum Limit

2. Observation of a fractional quantum number

3. Quantized Hall effect at low temperatures

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3. Quantum Hall physics: Hierarchies and conformal field theory techniques;Reviews of Modern Physics;2017-05-23

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