Film and interface properties of epitaxial metal/insulator/semiconductor systems formed by ionized cluster beam deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference9 articles.
1. Epitaxial growth of Al on Si(111) and Si(100) by ionized‐cluster beam
2. Al metallization by ionized-cluster beam deposition and epitaxy
3. Observation of Initial Stage of Al Epitaxial Growth on Si(111) by Ionized Cluster Beam Deposition
4. Aluminium epitaxy on Si(111) and Si(100) using an ionized cluster beam
5. Vaporized-metal cluster formation and effect of kinetic energy of ionized clusters on film formation
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1. Collision of Clusters with Surfaces: Deposition, Surface Modification and Scattering;Metal Clusters at Surfaces;2000
2. Boron Group (Group 13);Free Atoms, Clusters, and Nanoscale Particles;1994
3. STM observations of the initial growth processes of metal thin film;Laser and Ion Beam Modification of Materials;1994
4. Lateral-Solid Phase Epitaxial Growth of Single-Crystal Al(110) Films over Striped SiO2Patterns*;Japanese Journal of Applied Physics;1993-09-15
5. Epitaxial growth of (001) Al on (111) Si by vapor deposition;Applied Physics Letters;1992-08-24
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