Epitaxial growth of (001) Al on (111) Si by vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107726
Reference15 articles.
1. Atomic structure of the epitaxial Al–Si interface
2. Epitaxial growth of Al on Si(111) and Si(100) by ionized‐cluster beam
3. Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition
4. Epitaxial Growth of Al on Si by Gas-Temperature-Controlled Chemical Vapor Deposition
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