Observation of Initial Stage of Al Epitaxial Growth on Si(111) by Ionized Cluster Beam Deposition-Reference-Cited by-同舟云学术

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Observation of Initial Stage of Al Epitaxial Growth on Si(111) by Ionized Cluster Beam Deposition

Published:1985-03-20 Issue:Part 2, No. 3 Volume:24 Page:L173-L174
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Inokawa Hiroshi,Yamada Isao,Takagi Toshinori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room-Temperature Growth of Al Films on Si(111)-7 7 Surface;Chinese Physics Letters;2004-07-30

2. Different Growth Modes of Al on Si(111)7 ×7 and Si(111)$\mbi{\sqrt{3}\times\sqrt{3}}$–Al Surfaces;Japanese Journal of Applied Physics;1999-08-15

3. Growth of aluminum on Si using dimethyl-ethyl amine alane;Applied Surface Science;1999-04

4. Ionized cluster beam deposition of antimony and bismuth films;Journal of Physics D: Applied Physics;1999-01-01

5. Epitaxial Growth of Aluminum on Silicon Substrates by Metalorganic Molecular Beam Epitaxy using Dimethyl-Ethylamine Alane;Japanese Journal of Applied Physics;1998-05-15

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