Different Growth Modes of Al on Si(111)7 ×7 and Si(111)$\mbi{\sqrt{3}\times\sqrt{3}}$

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Different Growth Modes of Al on Si(111)7 ×7 and Si(111)$\mbi{\sqrt{3}\times\sqrt{3}}$–Al Surfaces

Published:1999-08-15 Issue:Part 1, No. 8 Volume:38 Page:4881-4886
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Horio Yoshimi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research Progress of Reverse Monte Carlo and Its Application in Josephson Junction Barrier Layer;Computer Modeling in Engineering & Sciences;2023

2. Optimization of Al/AlOx/Al-layer systems for Josephson junctions from a microstructure point of view;Journal of Applied Physics;2019-04-28

3. Nucleation and growth of metamorphic epitaxial aluminum on silicon (111) 7 × 7 and surfaces;Journal of Materials Research;2017-08-21

4. Metamorphic growth of relaxed single crystalline aluminum on silicon (111);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-12-19

5. Quantum Confinement Drives Macroscopic Stress Oscillations at the Initial Stage of Thin Film Growth;Physical Review Letters;2012-07-27

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