Arsenic passivation of MOMBE grown GaAs surfaces-Reference-Cited by-同舟云学术

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Arsenic passivation of MOMBE grown GaAs surfaces

Published:1988-10 Issue:3 Volume:204 Page:485-490
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Schäfer B.-J,Förster A,Londschien M,Tulke A,Werner K,Kamp M,Heinecke H,Weyers M,Lüth H,Balk P

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference12 articles.

1. Protection of molecular beam epitaxy grown AlxGa1−xAs epilayers during ambient transfer

2. Collected Papers of the 2nd International Conference on Molecular Beam Epitaxy and Related Clean Surface Techniques;Price,1982

3. A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs

4. Doping of GaAs in metalorganic MBE using gaseous sources

5. Metalorganic Molecular Beam Epitaxy (MOMBE);Lüth,1986

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1. Preparation of Well-Defined Surfaces, Interfaces and Thin Films;Graduate Texts in Physics;2010

2. Utilizing Gallium Arsenide Sacrificial Films to Inhibit Surface Roughening during the Thermal Desorption of Gallium Arsenide;Electrochemical and Solid-State Letters;2007

3. Preparation of Well-Defined Surfaces, Interfaces and Thin Films;Advanced Texts in Physics;2001

4. Interaction between As and InP(110) studied by photoemission;Physical Review B;2000-01-15

5. High-temperature arsenic adsorption on InP(110)—surface bonding and surface structure;Journal of Electron Spectroscopy and Related Phenomena;1998-11

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