Energy band alignment in GaAs:(Al,Ga)As heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference9 articles.
1. Energy band‐gap discontinuities in GaAs:(Al,Ga)As heterojunctions
2. Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition
3. J. Batey, S.L. Wright, D.J. DiMaria and T.N. Theis, unpublished.
4. Electrical characterization of GaAs/AlGaAs semiconductor‐insulator‐semiconductor capacitors and application to the measurement of the GaAs/AlGaAs band‐gap discontinuity
5. Negative charge, barrier heights, and the conduction‐band discontinuity in AlxGa1−xAs capacitors
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2. Calculation of Electronic States in Semiconductor Heterostructures with an Empirical spds* Tight-Binding Model;physica status solidi (b);2000-01-13
3. Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAs/AlxGa1−x As superlattice with doped quantum wells;Semiconductors;1998-05
4. Superlattice Calculation in an Empirical spds* Tight-Binding Model;MRS Proceedings;1997
5. InAs-InAs/sub x/Sb/sub 1-x/ type-II superlattice midwave infrared lasers grown on InAs substrates;IEEE Journal of Selected Topics in Quantum Electronics;1995-06
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