Magnetotunneling from accumulation layers in AlxGa1−xAs capacitors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference18 articles.
1. Electrical measurements onn+‐GaAs‐undoped Ga0.6Al0.4As‐n‐GaAs capacitors
2. Negative charge, barrier heights, and the conduction‐band discontinuity in AlxGa1−xAs capacitors
3. Energy band‐gap discontinuities in GaAs:(Al,Ga)As heterojunctions
4. Electrical characterization of GaAs/AlGaAs semiconductor‐insulator‐semiconductor capacitors and application to the measurement of the GaAs/AlGaAs band‐gap discontinuity
5. Resonant Fowler–Nordheim tunneling inn−GaAs‐undoped AlxGa1−xAs‐n+GaAs capacitors
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