Experimental studies of ionization processes in sputtering of GaAs

Author:

Šroubek Z.,Oechsner H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Mass and energy distribution of negatively and positively charged small cluster ions sputtered from GaAs(100) by 150 keV Ar + bombardment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-09

2. Energy distributions of Ga+ and In+ secondary ions sputtered from AIIIBV compound semiconductors by noble gas ions: Mass-dependence of the high-energy yield on the second component (P, As, Sb) of the compounds;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-04

3. Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(110) surfaces;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-06

4. Uniform surface elemental analysis using sputtering and photoionization mass spectrometry with a 6 ns pulse length Nd:YAG laser;Journal of Applied Physics;1999-09-15

5. Interaction of slow, very highly charged ions with surfaces;Progress in Surface Science;1999-06

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