Experimental studies of ionization processes in sputtering of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference13 articles.
1. Mechanisms of atomic ion emission during sputtering
2. Atom Ejection Studies for Sputtering of Semiconductors
3. Study of ionization processes in sputtering of LiF
4. Substrate surface excitations and ionization of particles sputtered from GaAs
5. Electronic excitations in collision cascades and the ionization of sputtered particles
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Mass and energy distribution of negatively and positively charged small cluster ions sputtered from GaAs(100) by 150 keV Ar + bombardment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-09
2. Energy distributions of Ga+ and In+ secondary ions sputtered from AIIIBV compound semiconductors by noble gas ions: Mass-dependence of the high-energy yield on the second component (P, As, Sb) of the compounds;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-04
3. Recoil-ion fractions in collisions of keV Ar+ and Kr+ ions with clean and adsorbate covered GaAs(110) surfaces;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-06
4. Uniform surface elemental analysis using sputtering and photoionization mass spectrometry with a 6 ns pulse length Nd:YAG laser;Journal of Applied Physics;1999-09-15
5. Interaction of slow, very highly charged ions with surfaces;Progress in Surface Science;1999-06
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