Atom Ejection Studies for Sputtering of Semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1708881
Reference12 articles.
1. Temperature Dependence of Ejection Patterns in Ge Sputtering
2. Temperature dependence of ejection patterns in Ge, Si, InSb, and InAs sputtering
3. Angular Distribution of Sputtered Material
4. Sputtering of Dielectrics by High‐Frequency Fields
5. THE NATURE AND ENERGY SPECTRUM OF RADIATION DEFECTS IN SEMICONDUCTORS
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1. Experimental studies of ionization processes in sputtering of GaAs;Surface Science;1996-03
2. Surface modification of GaAs(110) by low-energy ion irradiation;Physical Review B;1995-11-15
3. Sputtering of compound semiconductor surfaces. I. Ion-solid interactions and sputtering yields;Critical Reviews in Solid State and Materials Sciences;1994-01
4. Surface roughness development during sputtering of GaAs and InP: Evidence for the role of surface diffusion in ripple formation and sputter cone development;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1992-05
5. Velocity distribution and yield measurements of Fe ejected fromFeS2during ion bombardment;Physical Review B;1992-05-01
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