The surface geometry of GaAs(110): A response
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference30 articles.
1. Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)
2. Atomic geometry of cleavage surfaces of tetrahedrally coordinated compound semiconductors
3. The surface geometry of GaAs(110)
4. Surface bond angle and bond lengths of rearranged As and Ga atoms on GaAs(110)
5. Dynamical calculation of low-energy electron diffraction intensities from GaAs(110): Influence of boundary conditions, exchange potential, lattice vibrations, and multilayer reconstructions
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3. Structure of Prototypical Semiconductor Surfaces and Interfaces Investigated by Photoemission Extended X-Ray Absorption Fine Structure (PEXAFS);Surface Review and Letters;1998-10
4. Electronic localized and resonance states of relaxed GaAs(110) surface — an ab initio LMTO approach;Surface Science;1998-06
5. Adsorption of group-V elements on III–V (1 1 0) surfaces;Surface Science Reports;1996-11
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